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Veröffentlichungen
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Ion Beams and Nanoengineering
edited by D. Ila, P.K. Chu, N. Kishimoto, J.K.N. Lindner, J. Baglin
Materials Research Society Symposium Proceedings, Vol. 1181,Warrendale, PA, USA (2010),
ISBN: 978-1-60511-154-4;
Symposium DD at the MRS Spring Meeting 2009, San Francisco, USA
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Structural Characterization of Cubic and Hexagonal GaN Thin Films Grown by IBA-MBE on SiC/Si
M. Häberlen, J. W. Gerlach, B. Murphy, J.K.N. Lindner, B. Stritzker
Journal of Crystal Growth 312 (2010) 762
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Nonpolar cubic AlGaN/GaN HFETs grown by MBE on Ar+ implanted 3C SiC (001)
E. Tschumak, J.K.N. Lindner, M. Bürger, K. Lischka, H. Nagasawa, M. Abe, D.J. As
Phys. Status Solidi C 7 (2010) 104
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Non-polar cubic AlGaN/GaN HFET on Ar+ implanted 3C-SiC (001)
E. Tschumak, R. Granzner, J.K.N. Lindner, F. Schwierz, K. Lischka, H. Nagasawa, M. Abe, D.J. As
Submitted to Appl. Phys. Lett.
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Fine structure of triplet centers in room temperature irradiated 6H-SiC
A. Scholle, S. Greulich-Weber, E. Rauls, W. G. Schmidt, U. Gerstmann
Materials Science Forum Vols. 645-648 (2010) 403
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Characterization of unintentional doping in nonpolar GaN
T. T. Zhu, C. F. Johnston, M. Häberlen, M. J. Kappers, R. A. Oliver
Journal of Applied Physics, 107 (2010) 023503
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Structural characterization of cubic and hexagonal GaN thin films grown by IBA–MBE on SiC/Si
M. Häberlen, J. W. Gerlach, B. Murphy, J. K. N. Lindner, B. Stritzker
Journal of Crystal Growth 312 (2010) 762
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Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer
M. Häberlen, D. Zhu, C. McAleese, T. Zhu, M. J. Kappers, C. J. Humphreys,
Accepted for publication in physica status solidi (2010)
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The effects of annealing on non-polar ( ) a-plane GaN films
R. Hao, T. Zhu, M. Häberlen, T. Y. Chang, M. J. Kappers, R. A. Oliver, C. J. Humphreys,
M. A. Moram
Submitted to Journal of Applied Physics (2010)
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Low temperature photoluminescence and cathodoluminescence studies of non-polar GaN grown using epitaxial lateral overgrowth
M. Häberlen, T. J. Badcock, P. Dawson, M. A. Moram, M. J. Kappers, C. J. Humphreys,
R. A. Oliver
Submitted to Journal of Applied Physics (2010)
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Radiation Suppressed Diffusion in the System Ni-Ti-O
J. Lutz, J. W. Gerlach, J. K. N. Lindner, W. Assmann , S. Mändl
Nuclear Instruments and Methods in Physics Research B 267 (2009) 1634
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Molecular dynamics simulation of defect formation and precipitation in heavily carbon doped silicon
F. Zirkelbach, J.K.N. Lindner, K. Nordlund, B. Stritzker
Materials Science and Engineering B 159 (2009) 149
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Regular Silicon Surface Patterns by Local Swelling Induced by He Implantation through Nanosphere Lithography Masks
J.K.N. Lindner, C. Seider, F. Fischer, M. Weinl, B. Stritzker
Nuclear Instruments and Methods in Physics Research B 267 (2009) 1394
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Nanoscale Surface Patterning of Silicon Using Local Swelling Induced by He Implantation through NSL-Masks
F. J.C. Fischer, M. Weinl, J. K.N. Lindner, B. Stritzker
In: Ion Beams and Nanoengineering, edited by D. Ila, P.K. Chu, N. Kishimoto, J.K.N. Lindner, J. Baglin;
Materials Research Society Symposium Proceedings, Vol. 1181,Warrendale, PA, USA (2009),
ISBN: 978-1-60511-154-4;
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Plasma Modification of Nanosphere Lithography Masks Made of Polystyrene Beads
D. Gogel, M. Weinl, J. K.N. Lindner, B. Stritzker
J. of Optoelectronics and Advanced Materials (2009) in the press
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Spin-coupling in Heavily Nitrogen-doped 4H-SiC
D. V. Savchenko, A. Pöppl, E. N. Kalabukhova, S. Greulich-Weber, E. Rauls, W. G. Schmidt,
U. Gerstmann
Materials Science Forum Vols. 615 (2009) 343
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Vacancy clusters created via room temperature irradiation in 6H-SiC
A. Scholle, S. Greulich-Weber, E. Rauls, W.G. Schmidt, U. Gerstmann
Physica B (2009), doi:10.1016/j.physb.2009.08.123
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Direction-selective optical transmission of 3D fcc photonic crystals in the microwave regime
J. Üpping, P.T. Miclea, R.B. Wehrspohn, T. Baumgarten, S. Greulich-Weber
Photon Nanostruct: Fundam Appl (2009), doi:10.1016/j.photonics.2009.11.002
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Textile Solar Cells based on SiC microwires
S. Greulich-Weber, M. Zöller, B. Friedel
Materials Science Forum Vols. 615 - 617 (2009) 239
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Bottom-up Routes to Porous Silicon Carbide
S. Greulich-Weber, B. Friedel
Materials Science Forum Vols. 615 - 617 (2009) 637
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GaN-based LEDs grown on 6-inch diameter Si (111) substrates by MOVPE
D. Zhu, C. McAleese, K. K. McLaughlin, M. Häberlen, C. O. Salcianu, E. J. Thrush,
M. J. Kappers, W. A. Phillips, P. Lane, D. J. Wallis, T. Martin, M. Astles, S. Thomas, A. Pakes, M. Heuken, C. J. Humphreys
Proc. SPIE Photonics West (2009) 7231
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Ion Implantation: Fundamental Aspects and Recent Applications
J.K.N. Lindner
2nd GRK Convention Bad Karlshafen Germany (26.-27.11.2009)
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Ionenstrahlmodifikation kleiner Oberflächenbereiche mittels selbstorganisierter Nanomasken
J.K.N. Lindner
Seminar des RUBION der Ruhr-Universität Bochum (26. Juni 2009)
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